STL8DN6LF3

库存:
0(总库存量:0
最小起订:
0
增量:
0
总价: 0 (含13%增值税)
加入购物车成功
产品类别
MOSFETs
简介说明
Trans MOSFET N-CH 60V 20A Automotive 8-Pin Power Flat EP T/R
查看所有
MOSFETs
STMicroelectronics
EU RoHS COMPLWE
Channel Mode: Enhancement
Channel Mode describes the feature that describes the operation mode of the channel, enhancement or depletion.
Channel Type: N
Channel Type describes The transistor channel type.
Configuration: Dual
Configuration describes the construction, arrangement or configuration of the device.
Maximum Drain Source Voltage: 60
Maximum Drain Source Voltage describes the maximum dc voltage between the drain and source terminals.
Maximum Gate Source Voltage: ±20
Maximum Gate Source Voltage describes dc voltage between the gate and source terminals.
Maximum Continuous Drain Current: 20
Maximum Continuous Drain Current describes the current which is carried by free electrons traveling from source to drain when a small voltage VDS is applied between drain and source.
Maximum Continuous Drain Current Range: 20 to 50
Maximum Continuous Drain Current Range describes the range of Maximum Continuous Drain Current.
Maximum Drain Source Resistance: 30@10V
Maximum Drain Source Resistance describes the maximum resistance between the drain and source terminals at on state at maximum or largest specified gate-source voltage condition taken from electrical characteristic tables.
Packaging: Tape and Reel
Packaging describes the method of containing/packaging a product for delivery or sales.
Minimum Operating Temperature: -55
Minimum Operating Temperature describes the minimum temperature that the device can function correctly while working.
Typical Gate Charge @ Vgs: 13@10V
Typical Gate Charge @ Vgs describes the charge on the gate terminal of the MOSFET determined by its Gate-to-Source capacitance.
Typical Input Capacitance @ Vds: 668@25V
Typical Input Capacitance @ Vds describes the input capacitance measured between the gate and source terminals with the drain shorted to the source for AC signals.
Typical Fall Time: 5
Typical Fall Time describes typical time required for the trailing edge of a pulse to fall from 90% to 10% of its amplitude.
Maximum Power Dissipation: 65000
Maximum Power Dissipation describes the measure of the rate at which energy is dissipated, or lost, from a system.
Typical Rise Time: 7.7
Typical Rise Time describes the time required for a signal to change from a specified low value to a specified high value.
Typical Turn-Off Delay Time: 32.5
Typical Turn-Off Delay Time describes the time interval between the moment when the gate-emitter voltage VGE has declined to 90 % of its initial value (VGG), and the drain-source voltage has risen to 10 % of the supply voltage (VDD).
Typical Turn-On Delay Time: 9
Typical Turn-On Delay Time describes the time interval between the moment when the gate-emitter voltage VGE has reached 10 % of its end value (VGG), and when the drain-source voltage has dropped to 90 % of its initial value (VDD).
Maximum Operating Temperature: 175
Maximum Operating Temperature describes the maximum temperature that the device can function correctly while working.
Supplier Temperature Grade: Automotive
Supplier Temperature Grade describes the applications or environment that the device can be used in like commercial, industrial and military.
Temperature Flag: Stg/Jun
Category: Power MOSFET
Category describes the type, function or classification of the device.
Number of Elements per Chip: 2
Number of Elements per Chip describes the number of elements in each chip.
Life Cycle: Active
Minimum Storage Temperature: -55
Minimum Storage Temperature describes the minimum temperature at which the device can be safely stored when the device is not powered.
Maximum Storage Temperature: 175
Maximum Storage Temperature describes the maximum temperature at which the device can be safely stored when the device is not powered.
Typical Gate Charge @ 10V: 13
Typical Gate Charge @ 10V describes the charge on the gate terminal of the MOSFET determined by its Gate-to-Source capacitance at Vgs = 10V.
Process Technology: StripFET III
Process Technology describes the manufacturing process used to fabricate the integrated circuit, specified in the transistor technology, the minimum transistor gate length, and the connecting metal layers for the circuit elements.
Maximum IDSS: 1
Maximum IDSS describes the drain-to-source leakage current when it is in off state where the gate is being shorted with the source. Or the saturation current when the device is on state.
Maximum Gate Source Leakage Current: 100
Maximum Gate Source Leakage Current describes the leakage current that flows through the gate terminal at a specified gate-source voltage.
Maximum Gate Threshold Voltage: 2.5
Maximum Gate Threshold Voltage describes the gate-source voltage at which drain current begins to flow, or stops flowing when switching off the MOSFET.
Temperature Grade: Military
Automotive: Yes
AEC Qualified Number: AEC-Q101
Base Material: Cu Alloy
CECC Qualified: No
Contains SVHC: YES
Diameter: N/R
DW Flag: N
Exceed Limit: YES
Lead Finish Material: Matte Sn annealed
Lead Shape: No Lead
Maximum Reflow Temperature: 260
Maximum Wave Temperature: N/R
Military Qualified: No
Moisture Sensitivity level: 1
Mounting: Surface Mount
Package Height: 0.95(Max)
Package Length: 5
Package Width: 6
PCB changed: 8
Pin Count: 8
Pin Count describes number of leads attached to package body or number of contact points for each component.
Pin Out: N
Schedule B: 8541290080
Supplier Package: Power Flat EP
Tab: N/R