SI2323DS-T1-E3

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Vishay
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产品类别
MOSFETs
简介说明
Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
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MOSFETs
Vishay
EU RoHS COMPL
Minimum Gate Threshold Voltage: 0.4
Minimum Gate Threshold Voltage describes the minimum gate-source voltage at which drain current begins to flow, or stops flowing when switching off the MOSFET.
Channel Mode: Enhancement
Channel Mode describes the feature that describes the operation mode of the channel, enhancement or depletion.
Channel Type: P
Channel Type describes The transistor channel type.
Configuration: Single
Configuration describes the construction, arrangement or configuration of the device.
Maximum Drain Source Voltage: 20
Maximum Drain Source Voltage describes the maximum dc voltage between the drain and source terminals.
Maximum Gate Source Voltage: ±8
Maximum Gate Source Voltage describes dc voltage between the gate and source terminals.
Maximum Continuous Drain Current: 3.7
Maximum Continuous Drain Current describes the current which is carried by free electrons traveling from source to drain when a small voltage VDS is applied between drain and source.
Maximum Continuous Drain Current Range: 1 to 5
Maximum Continuous Drain Current Range describes the range of Maximum Continuous Drain Current.
Maximum Drain Source Resistance: 39@4.5V
Maximum Drain Source Resistance describes the maximum resistance between the drain and source terminals at on state at maximum or largest specified gate-source voltage condition taken from electrical characteristic tables.
Packaging: Tape and Reel
Packaging describes the method of containing/packaging a product for delivery or sales.
Maximum Continuous Drain Current on PCB @ TC=25°C: 4.7
Maximum Continuous Drain Current on PCB @ TC=25°C describes the current which is carried by free electrons traveling from source to drain when a small voltage VDS is applied between drain and source on known PCB @ TC=25°C
Maximum Positive Gate Source Voltage: 8
Maximum Positive Gate Source Voltage describes dc voltage between the gate and source terminals.
Typical Gate Plateau Voltage: 1.5
Typical Gate Plateau Voltage describes the gate voltage which clamped and stays there until sufficient charge has been added/ removed for the device to switch.
Typical Diode Forward Voltage: 0.7
Typical Diode Forward Voltage Describes the typical forward voltage across the diode terminals.
Maximum Diode Forward Voltage: 1.2
Maximum Diode Forward Voltage Describes the maximum forward voltage across the diode terminals.
Maximum Pulsed Drain Current @ TC=25°C: 20
Maximum Pulsed Drain Current @ TC=25°C describes the maximum allowable peak drain current for pulsed operation @ TC=25°C.
Maximum Power Dissipation on PCB @ TC=25°C: 1.25
Maximum Power Dissipation on PCB @ TC=25°C describes the measure of the rate at which energy is dissipated, or lost, from a system on known PCB @ TC=25°C.
Maximum Junction Ambient Thermal Resistance on PCB: 166
Maximum Junction Ambient Thermal Resistance on PCB describes thermal resistance between junction and ambient, thermal resistance is the temperature difference across a structure when a unit of heat energy flows through it in unit time. It is the reciprocal of thermal conductance on known PCB.
Minimum Operating Temperature: -55
Minimum Operating Temperature describes the minimum temperature that the device can function correctly while working.
Typical Gate Charge @ Vgs: 12.5@4.5V
Typical Gate Charge @ Vgs describes the charge on the gate terminal of the MOSFET determined by its Gate-to-Source capacitance.
Typical Input Capacitance @ Vds: 1020@10V
Typical Input Capacitance @ Vds describes the input capacitance measured between the gate and source terminals with the drain shorted to the source for AC signals.
Typical Fall Time: 48
Typical Fall Time describes typical time required for the trailing edge of a pulse to fall from 90% to 10% of its amplitude.
Maximum Power Dissipation: 1250
Maximum Power Dissipation describes the measure of the rate at which energy is dissipated, or lost, from a system.
Typical Rise Time: 43
Typical Rise Time describes the time required for a signal to change from a specified low value to a specified high value.
Typical Turn-Off Delay Time: 71
Typical Turn-Off Delay Time describes the time interval between the moment when the gate-emitter voltage VGE has declined to 90 % of its initial value (VGG), and the drain-source voltage has risen to 10 % of the supply voltage (VDD).
Typical Turn-On Delay Time: 25
Typical Turn-On Delay Time describes the time interval between the moment when the gate-emitter voltage VGE has reached 10 % of its end value (VGG), and when the drain-source voltage has dropped to 90 % of its initial value (VDD).
Maximum Operating Temperature: 150
Maximum Operating Temperature describes the maximum temperature that the device can function correctly while working.
Temperature Flag: Stg/Jun
Category: Power MOSFET
Category describes the type, function or classification of the device.
Number of Elements per Chip: 1
Number of Elements per Chip describes the number of elements in each chip.
Life Cycle: NRND
Maximum Junction Ambient Thermal Resistance: 166°C/W
Maximum Junction Ambient Thermal Resistance describes thermal resistance between junction and ambient, thermal resistance is the temperature difference across a structure when a unit of heat energy flows through it in unit time. It is the reciprocal of thermal conductance.
Typical Gate to Drain Charge: 3.3
Typical Gate to Drain Charge describes the amount of charge that is required during the MOSFETs turn-on or turn-off transient.
Typical Output Capacitance: 191
Typical Output Capacitance describes the summation of the gate to source capacitance and gate to drain capacitance.
Typical Forward Transconductance: 16
Typical Forward Transconductance describes the gain in the MOSFET. It describes the amount of change in drain current by the amount of change in the gate-source bias voltage.
Maximum Drain Source Resistance @ Vgs: 39@4.5V|52@2.5V|68@1.8V
Maximum Drain Source Resistance @ Vgs describes the resistance between the drain and source terminals with a specified gate-source voltage applied on the device at on state.
Minimum Storage Temperature: -55
Minimum Storage Temperature describes the minimum temperature at which the device can be safely stored when the device is not powered.
Maximum Storage Temperature: 150
Maximum Storage Temperature describes the maximum temperature at which the device can be safely stored when the device is not powered.
Typical Gate to Source Charge: 1.7
Typical Gate to Source Charge describes the amount of charge that is required during the MOSFETs turn-on or turn-off transient.
Package Region: World Wide
Package Region describes the place at which the supplier offer the product.
Typical Drain Source Resistance @ 25°C: 31@4.5V|41@2.5V|54@1.8V
Typical Drain Source Resistance @ 25°C describes the resistance between the drain and source terminals with a specified gate-source voltage applied on the device at on state.
Maximum Continuous Drain Current @ Temperature: 2.9@Ta=70C
Maximum Continuous Drain Current @ Temperature describes the current which is carried by free electrons traveling from source to drain when a small voltage VDS is applied between drain and source at operating Temperature.
Process Technology: TrenchFET
Process Technology describes the manufacturing process used to fabricate the integrated circuit, specified in the transistor technology, the minimum transistor gate length, and the connecting metal layers for the circuit elements.
Maximum IDSS: 1
Maximum IDSS describes the drain-to-source leakage current when it is in off state where the gate is being shorted with the source. Or the saturation current when the device is on state.
Maximum Gate Source Leakage Current: 100
Maximum Gate Source Leakage Current describes the leakage current that flows through the gate terminal at a specified gate-source voltage.
Maximum Gate Threshold Voltage: 1
Maximum Gate Threshold Voltage describes the gate-source voltage at which drain current begins to flow, or stops flowing when switching off the MOSFET.
Temperature Grade: Military
Tradename: TrenchFET®
Tradename describes the official name under which a company does business. It is also known as a doing business as name, assumed name, or fictitious name. A trade name does not afford any brand name protection or provide you with unlimited rights for the use of that name. However, registering a trade name is an important step for some but not all businesses.
Typical Reverse Transfer Capacitance @ Vds: 140@10V
Typical Reverse Transfer Capacitance @ Vds describes the equivalent internal capacitance between the drain and gate.
Automotive: No
AEC Qualified Number: N/R
Base Material: Cu Olin 194
CECC Qualified: No
Contains SVHC: NO
Diameter: N/R
Dose Level: N/A
DW Flag: N
ESD Protection: Unknown
Exceed Limit: NO
Lead Finish Material: Matte Sn
Lead Shape: Gull-wing
Maximum Reflow Temperature: 260
Maximum Wave Temperature: N/R
Military Qualified: No
Moisture Sensitivity level: 1
Mounting: Surface Mount
Package Height: 1.02(Max)
Package Length: 3.04(Max)
Package Width: 1.4(Max)
PCB changed: 3
Pin Count: 3
Pin Out: Y
Rad Hard: No
Schedule B: 8541290080
Standard Package Name: SOT
Supplier Package: SOT-23
Tab: N/R
Total Weight UOM: g
Total Weight Value: 0.0110588000
Under Plating Material: N/R
Operating Junction Temperature: -55 to 150
Operating Junction Temperature describes the temperature of the silicon die within the package of the device when the device is powered.