BC847CDW1T1G

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GP BJT
简介说明
Trans GP BJT NPN 45V 0.1A 380mW 6-Pin SC-88 T/R
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GP BJT
ON Semiconductor
EU RoHS COMPL
Type: NPN
Type describes the type of the component.
Maximum Collector-Emitter Voltage Range: 40 to 50
Maximum Collector Emitter Voltage Range describes the range of Maximum Collector Emitter Voltage.
Maximum Collector-Emitter Voltage: 45
Maximum Collector Emitter Voltage describes the maximum voltage between the collector and emitter when the base is open-circuited.
Maximum DC Collector Current Range: 0.06 to 0.12
Maximum DC Collector Current Range describes the range of Maximum DC Collector Current.
Maximum DC Collector Current: 0.1
Maximum DC Collector Current describes the maximum forward current which flows through the Collector junction when a forward voltage is applied between the base and Emitter.
Minimum DC Current Gain Range: 300 to 500
Minimum DC Current Gain Range describes the range of minimum DC current gain which is used in SE parametric search.
Minimum DC Current Gain: 420@2mA@5V
Minimum DC Current Gain describes the ratio of collector current to base current IC/IB at a specified IC and VCE.
Packaging: Tape and Reel
Packaging describes the method of containing/packaging a product for delivery or sales.
Configuration: Dual
Configuration describes the construction, arrangement or configuration of the device.
Minimum Operating Temperature: -55
Minimum Operating Temperature describes the minimum temperature that the device can function correctly while working.
Maximum Collector-Emitter Saturation Voltage: 0.25@0.5mA@10mA|0.6@5mA@100mA
Maximum Collector Emitter Saturation Voltage describes the voltage drop between collector and emitter when transistor is fully turned "on".
Maximum Base Emitter Saturation Voltage: 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
Maximum Base Emitter Saturation Voltage describes the voltage drop between base and emitter when transistor is fully turned "on".
Maximum Emitter Base Voltage: 6
Maximum Emitter Base Voltage describes the maximum voltage between the emitter and base when the collector is open-circuited.
Maximum Collector Base Voltage: 50
Maximum Collector Base Voltage describes the maximum voltage between the Collector and base when the emitter is open-circuited.
Maximum Transition Frequency: 100(Min)
Maximum Transition Frequency is defined as the frequency at which the grounded-emitter small signal current gain hFE becomes 1 at a specified VCE and IC.
Maximum Power Dissipation: 380
Maximum Power Dissipation describes the measure of the rate at which energy is dissipated, or lost, from a system.
Maximum Operating Temperature: 150
Maximum Operating Temperature describes the maximum temperature that the device can function correctly while working.
Temperature Flag: Stg/Jun
Category: Bipolar Small Signal
Category describes the type, function or classification of the device.
Number of Elements per Chip: 2
Number of Elements per Chip describes the number of elements in each chip.
Life Cycle: Active
Minimum Storage Temperature: -55
Minimum Storage Temperature describes the minimum temperature at which the device can be safely stored when the device is not powered.
Maximum Storage Temperature: 150
Maximum Storage Temperature describes the maximum temperature at which the device can be safely stored when the device is not powered.
Maximum Noise Figure: 10
Maximum Noise Figure describes the measure of degradation of the signal to noise ratio (SNR), caused by components in the RF signal chain.
Maximum Junction Ambient Thermal Resistance: 328°C/W
Maximum Junction Ambient Thermal Resistance describes thermal resistance between junction and ambient, thermal resistance is the temperature difference across a structure when a unit of heat energy flows through it in unit time. It is the reciprocal of thermal conductance.
Maximum Collector Cut-Off Current: 15
Maximum Collector Cut-Off Current describes the collector current when a specified voltage is applied between the collector and be with the emitter open-circuited.
Temperature Grade: Military
Automotive: No
AEC Qualified Number: N/R
Base Material: CuFeNi
CECC Qualified: No
Contains SVHC: NO
Diameter: N/R
Dose Level: N/A
DW Flag: N
ESD Protection: Unknown
Exceed Limit: NO
Lead Finish Material: Matte Sn annealed
Lead Shape: Gull-wing
Maximum Reflow Temperature: 260
Maximum Wave Temperature: N/R
Military Qualified: No
Moisture Sensitivity level: 1
Mounting: Surface Mount
Package Height: 0.9
Package Length: 2
Package Width: 1.25
PCB changed: 6
Pin Count: 6
Pin Out: Y
Rad Hard: No
Schedule B: 8541210080
Standard Package Name: SC
Supplier Package: SC-88
Tab: N/R
Total Weight UOM: g
Total Weight Value: 0.0062000000
Under Plating Material: N/A
Operating Junction Temperature: -55 to 150
Operating Junction Temperature describes the temperature of the silicon die within the package of the device when the device is powered.